
2025-10-21 05:29:16
超(chao)寬帶(dai)電(dian)(dian)(dian)(dian)容(rong)除了用(yong)于退耦(ou),還與電(dian)(dian)(dian)(dian)感組(zu)合(he),構(gou)成LC濾(lv)波器(qi)(qi),用(yong)于信號(hao)(hao)(hao)線的(de)噪(zao)(zao)聲(sheng)(sheng)濾(lv)除。通(tong)過精心選擇電(dian)(dian)(dian)(dian)容(rong)和(he)電(dian)(dian)(dian)(dian)感的(de) values,可(ke)以設計出帶(dai)通(tong)、帶(dai)阻或(huo)低通(tong)特性(xing)的(de)濾(lv)波器(qi)(qi),覆蓋非常寬的(de)頻帶(dai)。例如(ru)(ru)(ru),在(zai)(zai)(zai)高(gao)速數字接口(kou)(如(ru)(ru)(ru)PCIe)中(zhong)(zhong),常使(shi)用(yong)LC濾(lv)波器(qi)(qi)來(lai)抑制EMI。在(zai)(zai)(zai)此類應用(yong)中(zhong)(zhong),要求電(dian)(dian)(dian)(dian)容(rong)和(he)電(dian)(dian)(dian)(dian)感自身都具有低損耗和(he)高(gao)SRF,以確保濾(lv)波器(qi)(qi)在(zai)(zai)(zai)目標頻段內的(de)性(xing)能(neng)符合(he)預期,避免因元(yuan)件自身的(de)寄生參數導致性(xing)能(neng)惡(e)化。光模(mo)塊(如(ru)(ru)(ru)400G, 800G OSFP)將電(dian)(dian)(dian)(dian)信號(hao)(hao)(hao)轉(zhuan)(zhuan)換為(wei)光信號(hao)(hao)(hao)進行(xing)傳輸(shu),其(qi)內部(bu)的(de)激光驅動(dong)器(qi)(qi)(LDD)、跨阻放大器(qi)(qi)(TIA)和(he)時(shi)鐘數據恢復(CDR)電(dian)(dian)(dian)(dian)路(lu)都是(shi)高(gao)速模(mo)擬電(dian)(dian)(dian)(dian)路(lu),對電(dian)(dian)(dian)(dian)源噪(zao)(zao)聲(sheng)(sheng)非常敏(min)感。超(chao)寬帶(dai)電(dian)(dian)(dian)(dian)容(rong)為(wei)這些電(dian)(dian)(dian)(dian)路(lu)提供本地(di)去耦(ou),確保信號(hao)(hao)(hao)的(de)純凈度,從(cong)而降低誤碼率(lv)(BER)。同時(shi),在(zai)(zai)(zai)光電(dian)(dian)(dian)(dian)轉(zhuan)(zhuan)換的(de)接口(kou)處(chu),也需要超(chao)寬帶(dai)電(dian)(dian)(dian)(dian)容(rong)進行(xing)隔(ge)直和(he)匹配。其(qi)性(xing)能(neng)直接影響(xiang)到光模(mo)塊的(de)傳輸(shu)距離(li)、功耗和(he)可(ke)靠性(xing)。低溫共燒陶瓷(LTCC)技術可(ke)實現無源集成與微型化。111XCC150M100TT

系(xi)統級封(feng)(feng)裝(zhuang)(SiP)是電(dian)(dian)(dian)(dian)子 miniaturization 的重(zhong)要(yao)方(fang)向。在其(qi)中,嵌(qian)入式(shi)電(dian)(dian)(dian)(dian)容(rong)技術(shu)扮演了(le)關(guan)(guan)鍵角色。該技術(shu)將電(dian)(dian)(dian)(dian)容(rong)介質材(cai)料(如聚合(he)物-陶(tao)瓷復合(he)材(cai)料)以薄膜形(xing)式(shi)直(zhi)接沉積在SiP基板(ban)(如硅中介層(ceng)、陶(tao)瓷基板(ban)、有機基板(ban))的電(dian)(dian)(dian)(dian)源層(ceng)和(he)地層(ceng)面之(zhi)間(jian)(jian),形(xing)成分(fen)布(bu)式(shi)的去耦電(dian)(dian)(dian)(dian)容(rong)。這種(zhong)結(jie)構的比較(jiao)大優勢(shi)是幾乎消除了(le)所有封(feng)(feng)裝(zhuang)和(he)安裝(zhuang)電(dian)(dian)(dian)(dian)感(ESL極(ji)(ji)(ji)低),提供了(le)近乎理想的超(chao)寬帶去耦性能,同時極(ji)(ji)(ji)大節(jie)省了(le)空間(jian)(jian)。這對于芯片間(jian)(jian)距極(ji)(ji)(ji)小、功耗巨大且噪聲敏感的2.5D/3D IC封(feng)(feng)裝(zhuang)(如HBM內存與GPU的集成)至關(guan)(guan)重(zhong)要(yao),是解決未來高性能計算電(dian)(dian)(dian)(dian)源完整(zheng)性的終方(fang)案之(zhi)一(yi)。111YDA220M100TTPCB布(bu)局需優化,過孔和(he)走線會引(yin)入額外安裝(zhuang)電(dian)(dian)(dian)(dian)感。

現代(dai)汽(qi)車(che)電(dian)(dian)子,特別是自動(dong)駕(jia)駛(shi)系(xi)(xi)統(tong)和ADAS(高(gao)(gao)(gao)級(ji)駕(jia)駛(shi)輔助系(xi)(xi)統(tong)),高(gao)(gao)(gao)度依(yi)賴各(ge)種傳感器(qi)(攝像頭、激光雷達、毫米(mi)波雷達)和高(gao)(gao)(gao)速(su)數據處(chu)理(li)單元。車(che)載(zai)毫米(mi)波雷達工作在24GHz和77GHz頻(pin)段,其(qi)射頻(pin)前端需要(yao)超寬(kuan)帶(dai)電(dian)(dian)容(rong)進行退耦(ou)(ou)和隔直(zhi),以(yi)確保(bao)探測精度和距離(li)分(fen)辨率(lv)。域控制器(qi)和高(gao)(gao)(gao)速(su)網關對數據處(chu)理(li)能力要(yao)求極高(gao)(gao)(gao),需要(yao)超寬(kuan)帶(dai)退耦(ou)(ou)技(ji)術來保(bao)障處(chu)理(li)器(qi)和存儲器(qi)的(de)穩定(ding)運行。此外,汽(qi)車(che)電(dian)(dian)子對元器(qi)件的(de)壽(shou)命、可(ke)靠性(xing)、耐溫(wen)性(xing)和抗振動(dong)性(xing)要(yao)求極高(gao)(gao)(gao),車(che)規級(ji)AEC-Q200認(ren)證的(de)超寬(kuan)帶(dai)電(dian)(dian)容(rong)成為不可(ke)或缺的(de)重心組(zu)件,直(zhi)接關系(xi)(xi)到行車(che)**。
封裝小型化是提升高頻性能的必然趨勢。更小的物理尺寸(如01005, 0201, 0402封裝)意味著更短的內部電流路徑和更小的電流回路面積,從而天然具有更低的ESL。這使得小封裝電容的自諧振頻率(SRF)可以輕松達到GHz以上,非常適合用于芯片周邊的超高頻退耦。然而,小型化也帶來了挑戰:更小的尺寸對制造精度、材料均勻性和貼裝工藝提出了更高要求;同時,容值通常較小。因此,在PCB設計中,通常采用“大小搭配”的策略,將超小封裝的電容盡可能靠近芯片的電源引腳放置,以應對比較高頻的噪聲,而稍大封裝的電容則負責稍低的頻段,共同構建一個從低頻到超高頻的全譜系退耦網絡。
在**成像設備(bei)(如(ru)MRI)中要求極低的噪聲和失真。

全(quan)球主要的(de)被動元(yuan)件供(gong)應商(如Murata, TDK, Samsung Electro-Mechanics, Taiyo Yuden, AVX)都提(ti)供(gong)豐富的(de)超寬帶(dai)電(dian)容產品線。選(xuan)型(xing)時需綜(zong)合考(kao)慮:一(yi)是(shi)頻率范圍和(he)要求(qiu)(qiu)阻(zu)抗,確定需要的(de)容值和(he)SRF;二是(shi)介質材(cai)料類型(xing)(COG vs. X7R),根(gen)據對穩定性(xing)(xing)、容差(cha)和(he)溫度(du)系(xi)數(shu)(shu)的(de)要求(qiu)(qiu)選(xuan)擇;三是(shi)直流(liu)偏壓特性(xing)(xing),確保在工(gong)作電(dian)壓下容值滿足要求(qiu)(qiu);四是(shi)封裝尺寸和(he)高(gao)度(du),符合PCB空(kong)間限制;五是(shi)可靠性(xing)(xing)等級,是(shi)否(fou)滿足車規、工(gong)規或軍規要求(qiu)(qiu);六是(shi)成本與供(gong)貨情(qing)況(kuang)。通(tong)常(chang)需要仔細研讀(du)各家的(de)數(shu)(shu)據手(shou)冊并進(jin)行(xing)實際測(ce)試驗證。在高(gao)級服務器和(he)數(shu)(shu)據中(zhong)心中(zhong)保障計算節點穩定運行(xing)。111XCC150M100TT
其主要價值在(zai)于有效抑制(zhi)從(cong)低頻(pin)到高頻(pin)的電源噪(zao)聲。111XCC150M100TT
超寬(kuan)帶(dai)電(dian)容(rong)(rong)并非指單一(yi)類(lei)型的(de)(de)電(dian)容(rong)(rong)器,而(er)是一(yi)種設(she)計(ji)理(li)念(nian)和(he)(he)技(ji)術追(zhui)求,旨在(zai)讓單個電(dian)容(rong)(rong)器或電(dian)容(rong)(rong)網絡在(zai)極其寬(kuan)廣(guang)的(de)(de)頻(pin)(pin)率范圍內(通常從幾Hz或幾十(shi)Hz的(de)(de)低(di)(di)頻(pin)(pin)一(yi)直(zhi)覆蓋(gai)到(dao)數GHz甚(shen)至數十(shi)GHz的(de)(de)高頻(pin)(pin))保(bao)持穩(wen)定(ding)、一(yi)致且(qie)優異的(de)(de)性能(neng)。其重(zhong)心價(jia)值在(zai)于解(jie)決現代復雜電(dian)子(zi)系(xi)統(tong)(tong),尤其是高頻(pin)(pin)和(he)(he)高速系(xi)統(tong)(tong)中(zhong),傳統(tong)(tong)電(dian)容(rong)(rong)器因寄生(sheng)參數(如ESL-等效(xiao)(xiao)(xiao)串聯電(dian)感(gan)和(he)(he)ESR-等效(xiao)(xiao)(xiao)串聯電(dian)阻)影響而(er)導致的(de)(de)頻(pin)(pin)域(yu)性能(neng)急(ji)劇退化問題。它通過創(chuang)新的(de)(de)材料學、結構(gou)設(she)計(ji)和(he)(he)封裝技(ji)術,比較大限(xian)度地壓制寄生(sheng)效(xiao)(xiao)(xiao)應(ying),確保(bao)從直(zhi)流到(dao)微波頻(pin)(pin)段(duan)的(de)(de)低(di)(di)阻抗特性,為(wei)高速集(ji)成電(dian)路、射頻(pin)(pin)模塊和(he)(he)微波設(she)備(bei)提供跨越多個數量(liang)級頻(pin)(pin)段(duan)的(de)(de)純凈(jing)能(neng)量(liang)供應(ying)和(he)(he)高效(xiao)(xiao)(xiao)噪(zao)聲抑制。111XCC150M100TT
深(shen)圳(zhen)市英翰(han)森科技有限(xian)公(gong)司(si)(si)是(shi)一家有著先進的(de)(de)(de)(de)發(fa)展(zhan)理(li)念,先進的(de)(de)(de)(de)管理(li)經驗,在發(fa)展(zhan)過程中不斷完善(shan)自(zi)(zi)己(ji),要求自(zi)(zi)己(ji),不斷創新,時(shi)刻準備著迎接更(geng)(geng)(geng)多(duo)(duo)挑戰(zhan)的(de)(de)(de)(de)活力(li)(li)(li)公(gong)司(si)(si),在廣(guang)東(dong)省等地(di)區(qu)的(de)(de)(de)(de)電子元器件中匯聚了(le)大量的(de)(de)(de)(de)人脈以(yi)及(ji)客戶資源,在業界也收(shou)獲了(le)很多(duo)(duo)良(liang)好(hao)的(de)(de)(de)(de)評價(jia),這些都源自(zi)(zi)于自(zi)(zi)身的(de)(de)(de)(de)努(nu)力(li)(li)(li)和(he)大家共同(tong)進步的(de)(de)(de)(de)結果,這些評價(jia)對我們(men)而言是(shi)**好(hao)的(de)(de)(de)(de)前進動力(li)(li)(li),也促使我們(men)在以(yi)后的(de)(de)(de)(de)道路上(shang)保持奮(fen)發(fa)圖強、一往(wang)無前的(de)(de)(de)(de)進取創新精神,努(nu)力(li)(li)(li)把公(gong)司(si)(si)發(fa)展(zhan)戰(zhan)略推向(xiang)一個新高度(du),在全體員工共同(tong)努(nu)力(li)(li)(li)之(zhi)下,全力(li)(li)(li)拼搏將共同(tong)深(shen)圳(zhen)市英翰(han)森科技供應和(he)您一起(qi)攜手走向(xiang)更(geng)(geng)(geng)好(hao)的(de)(de)(de)(de)未來(lai),創造更(geng)(geng)(geng)有價(jia)值(zhi)的(de)(de)(de)(de)產(chan)品,我們(men)將以(yi)更(geng)(geng)(geng)好(hao)的(de)(de)(de)(de)狀態,更(geng)(geng)(geng)認真(zhen)的(de)(de)(de)(de)態度(du),更(geng)(geng)(geng)飽滿的(de)(de)(de)(de)精力(li)(li)(li)去(qu)創造,去(qu)拼搏,去(qu)努(nu)力(li)(li)(li),讓我們(men)一起(qi)更(geng)(geng)(geng)好(hao)更(geng)(geng)(geng)快的(de)(de)(de)(de)成長!