半(ban)導(dao)(dao)體(ti)分立器(qi)(qi)件如(ru)(ru)何分類？分立器(qi)(qi)件當燃是二極(ji)(ji)管(guan)(guan)(guan)，三極(ji)(ji)管(guan)(guan)(guan)，MOS晶(jing)(jing)體(ti)管(guan)(guan)(guan)，JFET晶(jing)(jing)體(ti)管(guan)(guan)(guan)幾(ji)大(da)(da)類了如(ru)(ru)果細分的(de)話，如(ru)(ru)晶(jing)(jing)閘管(guan)(guan)(guan)，快速(su)(su)二極(ji)(ji)管(guan)(guan)(guan)等(deng)，就(jiu)得看半(ban)導(dao)(dao)體(ti)器(qi)(qi)件相關的(de)書了當然(ran)也(ye)可(ke)以包括電(dian)(dian)(dian)(dian)阻，電(dian)(dian)(dian)(dian)感，電(dian)(dian)(dian)(dian)容(rong)，這(zhe)是分立器(qi)(qi)件，不是半(ban)導(dao)(dao)體(ti)分立器(qi)(qi)件。半(ban)導(dao)(dao)體(ti)IC芯片是什(shen)么，有什(shen)么用途？集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu)IC(InterrgratedCircuit)是將(jiang)晶(jing)(jing)體(ti)管(guan)(guan)(guan)、電(dian)(dian)(dian)(dian)阻、電(dian)(dian)(dian)(dian)容(rong)、二極(ji)(ji)管(guan)(guan)(guan)等(deng)電(dian)(dian)(dian)(dian)子組件整合裝至一(yi)(yi)芯片(chip)上，由于集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu)的(de)體(ti)積極(ji)(ji)小，使(shi)電(dian)(dian)(dian)(dian)子運動的(de)距離大(da)(da)幅縮小，因此速(su)(su)度極(ji)(ji)快且可(ke)靠性高。集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu)的(de)種類一(yi)(yi)般是以內含(han)晶(jing)(jing)體(ti)管(guan)(guan)(guan)等(deng)電(dian)(dian)(dian)(dian)子組件的(de)數量來(lai)分類：SSI(小型集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu))，晶(jing)(jing)體(ti)管(guan)(guan)(guan)數10～100個；MSI(中型集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu))，晶(jing)(jing)體(ti)管(guan)(guan)(guan)數100～1000；LSI(大(da)(da)規模集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu))，晶(jing)(jing)體(ti)管(guan)(guan)(guan)數1000～100000；VLSI(超大(da)(da)規模集(ji)(ji)成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)路(lu))，晶(jing)(jing)體(ti)管(guan)(guan)(guan)數100000以上。晶(jing)(jing)體(ti)管(guan)(guan)(guan)作(zuo)為(wei)一(yi)(yi)種可(ke)變電(dian)(dian)(dian)(dian)流(liu)開關，能夠(gou)基于輸入電(dian)(dian)(dian)(dian)壓控制(zhi)輸出電(dian)(dian)(dian)(dian)流(liu)。深圳半(ban)導(dao)(dao)體(ti)晶(jing)(jing)體(ti)管(guan)(guan)(guan)

RF（r）---正(zheng)(zheng)向(xiang)(xiang)微分(fen)電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)。在(zai)正(zheng)(zheng)向(xiang)(xiang)導通(tong)時(shi)(shi)(shi)(shi)，電(dian)(dian)(dian)流(liu)隨電(dian)(dian)(dian)壓指(zhi)數的(de)(de)增(zeng)加(jia)，呈(cheng)現明顯的(de)(de)非線(xian)性特(te)性。在(zai)某一正(zheng)(zheng)向(xiang)(xiang)電(dian)(dian)(dian)壓下，電(dian)(dian)(dian)壓增(zeng)加(jia)微小量△V，正(zheng)(zheng)向(xiang)(xiang)電(dian)(dian)(dian)流(liu)相應增(zeng)加(jia)△I，則△V/△I稱微分(fen)電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)RBB---雙基極(ji)晶(jing)(jing)體(ti)(ti)管(guan)的(de)(de)基極(ji)間(jian)(jian)(jian)電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)RE---射(she)頻電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)RL---負載電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)Rs(rs)----串聯電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)Rth----熱(re)阻(zu)(zu)(zu)(zu)R(th)ja----結到環境(jing)的(de)(de)熱(re)阻(zu)(zu)(zu)(zu)Rz(ru)---動態電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)R(th)jc---結到殼的(de)(de)熱(re)阻(zu)(zu)(zu)(zu)r；δ---衰減電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)r(th)---瞬態電(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)Ta---環境(jing)溫(wen)度Tc---殼溫(wen)td---延遲時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tf---下降時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tfr---正(zheng)(zheng)向(xiang)(xiang)恢(hui)復時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tg---電(dian)(dian)(dian)路換向(xiang)(xiang)關(guan)斷(duan)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tgt---門(men)極(ji)控制極(ji)開(kai)通(tong)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)Tj---結溫(wen)Tjm---比較(jiao)高結溫(wen)ton---開(kai)通(tong)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)toff---關(guan)斷(duan)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tr---上升(sheng)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)trr---反(fan)向(xiang)(xiang)恢(hui)復時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)ts---存儲(chu)時(shi)(shi)(shi)(shi)間(jian)(jian)(jian)tstg---溫(wen)度補償二極(ji)管(guan)的(de)(de)貯成溫(wen)度a---溫(wen)度系數λp---發光峰值波長△。深(shen)圳半(ban)導體(ti)(ti)晶(jing)(jing)體(ti)(ti)管(guan)按(an)晶(jing)(jing)體(ti)(ti)管(guan)的(de)(de)極(ji)性可分(fen)為鍺NPN型晶(jing)(jing)體(ti)(ti)管(guan)、鍺PNP晶(jing)(jing)體(ti)(ti)管(guan)、硅(gui)NPN型晶(jing)(jing)體(ti)(ti)管(guan)和硅(gui)PNP型晶(jing)(jing)體(ti)(ti)管(guan)。

新(xin)型(xing)機電(dian)元(yuan)件(jian)產(chan)業(ye)——磁電(dian)子(zi)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)主要產(chan)品及服務：液(ye)晶顯示(shi)(shi)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)背光(guang)(guang)電(dian)源(yuan)(yuan)(yuan)驅動(dong)(dong)單(dan)(dan)元(yuan)以及變(bian)壓(ya)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)、電(dian)感線圈、電(dian)源(yuan)(yuan)(yuan)模(mo)塊；SMT加(jia)工業(ye)務。產(chan)品適用(yong)(yong)于液(ye)晶顯示(shi)(shi)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)、PDA等(deng)顯示(shi)(shi)設(she)(she)(she)備(bei)中(zhong)使(shi)(shi)用(yong)(yong)的(de)LCD背光(guang)(guang)驅動(dong)(dong)單(dan)(dan)元(yuan)及各類AV設(she)(she)(she)備(bei)、通信設(she)(she)(she)備(bei)、計測設(she)(she)(she)備(bei)、控(kong)制設(she)(she)(she)備(bei)等(deng)使(shi)(shi)用(yong)(yong)的(de)各種(zhong)線圈。新(xin)型(xing)機電(dian)元(yuan)件(jian)產(chan)業(ye)——集(ji)(ji)成(cheng)(cheng)光(guang)(guang)電(dian)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)集(ji)(ji)成(cheng)(cheng)光(guang)(guang)電(dian)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)是指(zhi)將具(ju)有多種(zhong)功(gong)能的(de)光(guang)(guang)電(dian)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)，用(yong)(yong)平面(mian)波(bo)導技術集(ji)(ji)成(cheng)(cheng)在某一基板上，使(shi)(shi)之(zhi)成(cheng)(cheng)為光(guang)(guang)電(dian)子(zi)系統。平面(mian)集(ji)(ji)成(cheng)(cheng)光(guang)(guang)電(dian)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)是光(guang)(guang)通訊器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)的(de)發(fa)展(zhan)方向,是技術和市場發(fa)展(zhan)的(de)必(bi)然趨勢，是我國重點(dian)鼓勵發(fa)展(zhan)的(de)高新(xin)產(chan)業(ye)之(zhi)一。主要產(chan)品包括多功(gong)能的(de)光(guang)(guang)無(wu)(wu)源(yuan)(yuan)(yuan)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)和有源(yuan)(yuan)(yuan)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)，如基于平面(mian)波(bo)導的(de)無(wu)(wu)源(yuan)(yuan)(yuan)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)件(jian)AWG，功(gong)率分(fen)離(li)器(qi)(qi)(qi)(qi)(qi)(qi)(qi)，集(ji)(ji)成(cheng)(cheng)化收發(fa)模(mo)塊，ONU（光(guang)(guang)網(wang)絡(luo)單(dan)(dan)元(yuan)）等(deng)。

IF---正(zheng)(zheng)向(xiang)(xiang)(xiang)直流(liu)(liu)(liu)(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)（正(zheng)(zheng)向(xiang)(xiang)(xiang)測(ce)試(shi)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)）。鍺檢波二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)在(zai)(zai)(zai)(zai)規定的(de)(de)(de)正(zheng)(zheng)向(xiang)(xiang)(xiang)電(dian)(dian)(dian)(dian)(dian)(dian)壓VF下，通(tong)(tong)過極(ji)(ji)(ji)(ji)(ji)間的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)；硅整流(liu)(liu)(liu)(liu)(liu)(liu)(liu)管(guan)(guan)(guan)(guan)、硅堆在(zai)(zai)(zai)(zai)規定的(de)(de)(de)使(shi)用條(tiao)(tiao)件下，在(zai)(zai)(zai)(zai)正(zheng)(zheng)弦半波中允(yun)許(xu)連續通(tong)(tong)過的(de)(de)(de)**大(da)工作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)（平均(jun)值(zhi)），硅開關二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)在(zai)(zai)(zai)(zai)額(e)定功率(lv)下允(yun)許(xu)通(tong)(tong)過的(de)(de)(de)**大(da)正(zheng)(zheng)向(xiang)(xiang)(xiang)直流(liu)(liu)(liu)(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)；測(ce)穩壓二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)正(zheng)(zheng)向(xiang)(xiang)(xiang)電(dian)(dian)(dian)(dian)(dian)(dian)參數時(shi)給(gei)定的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IF（AV）---正(zheng)(zheng)向(xiang)(xiang)(xiang)平均(jun)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IFM（IM）---正(zheng)(zheng)向(xiang)(xiang)(xiang)峰(feng)值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)（正(zheng)(zheng)向(xiang)(xiang)(xiang)**大(da)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)）。在(zai)(zai)(zai)(zai)額(e)定功率(lv)下，允(yun)許(xu)通(tong)(tong)過二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)的(de)(de)(de)比較大(da)正(zheng)(zheng)向(xiang)(xiang)(xiang)脈沖(chong)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)。發光(guang)(guang)二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)極(ji)(ji)(ji)(ji)(ji)限電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)。IH---恒(heng)定電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)、維持電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)。Ii---；發光(guang)(guang)二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)起輝電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IFRM---正(zheng)(zheng)向(xiang)(xiang)(xiang)重復峰(feng)值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IFSM---正(zheng)(zheng)向(xiang)(xiang)(xiang)不重復峰(feng)值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)（浪涌電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)）Io---整流(liu)(liu)(liu)(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)。在(zai)(zai)(zai)(zai)特定線路中規定頻率(lv)和規定電(dian)(dian)(dian)(dian)(dian)(dian)壓條(tiao)(tiao)件下所通(tong)(tong)過的(de)(de)(de)工作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IF(ov)---正(zheng)(zheng)向(xiang)(xiang)(xiang)過載電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)IL---光(guang)(guang)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)或穩流(liu)(liu)(liu)(liu)(liu)(liu)(liu)二(er)(er)極(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)(guan)極(ji)(ji)(ji)(ji)(ji)限電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)。凱軒業(ye)(ye)晶體管(guan)(guan)(guan)(guan)設(she)計，就(jiu)選深(shen)圳市凱軒業(ye)(ye)科技，讓您滿意，有想法可(ke)以來(lai)我司(si)咨詢！

由于(yu)(yu)(yu)發(fa)射(she)(she)極(ji)(ji)是兩(liang)(liang)個回(hui)(hui)(hui)路(lu)(lu)的(de)公(gong)共端(duan)，故稱(cheng)該電(dian)(dian)(dian)(dian)路(lu)(lu)為(wei)共射(she)(she)放大(da)電(dian)(dian)(dian)(dian)路(lu)(lu)。晶體(ti)管(guan)工作在放大(da)狀態的(de)外部(bu)條件是發(fa)射(she)(she)結(jie)正偏且集電(dian)(dian)(dian)(dian)結(jie)反向(xiang)偏置，所(suo)以輸入(ru)回(hui)(hui)(hui)路(lu)(lu)加(jia)的(de)基極(ji)(ji)電(dian)(dian)(dian)(dian)源和輸出(chu)回(hui)(hui)(hui)路(lu)(lu)加(jia)的(de)集電(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)源晶體(ti)管(guan)結(jie)構及類型(xing)用不同(tong)的(de)摻雜方(fang)式在同(tong)一(yi)個硅片上(shang)(shang)制造出(chu)三個摻雜區(qu)域，并(bing)形成兩(liang)(liang)個PN結(jie)，就(jiu)構成了晶體(ti)管(guan)。結(jie)構如(ru)(ru)圖(a)所(suo)示(shi)，位(wei)于(yu)(yu)(yu)中間的(de)P區(qu)稱(cheng)為(wei)基區(qu)，它很(hen)薄(bo)且雜質濃度很(hen)低；位(wei)于(yu)(yu)(yu)上(shang)(shang)層的(de)N區(qu)是發(fa)射(she)(she)區(qu)，摻雜濃度很(hen)高；位(wei)于(yu)(yu)(yu)下層的(de)N區(qu)是集電(dian)(dian)(dian)(dian)區(qu)，面積很(hen)大(da)；它們(men)分別引出(chu)電(dian)(dian)(dian)(dian)極(ji)(ji)為(wei)基極(ji)(ji)b,發(fa)射(she)(she)極(ji)(ji)e和集電(dian)(dian)(dian)(dian)極(ji)(ji)c。晶體(ti)管(guan)的(de)電(dian)(dian)(dian)(dian)流放大(da)作用如(ru)(ru)下圖所(suo)示(shi)為(wei)基本(ben)放大(da)電(dian)(dian)(dian)(dian)路(lu)(lu)，為(wei)輸入(ru)電(dian)(dian)(dian)(dian)壓信(xin)號，它接入(ru)基極(ji)(ji)-發(fa)射(she)(she)極(ji)(ji)回(hui)(hui)(hui)路(lu)(lu)，稱(cheng)為(wei)輸入(ru)回(hui)(hui)(hui)路(lu)(lu)；放大(da)后(hou)的(de)信(xin)號在集電(dian)(dian)(dian)(dian)極(ji)(ji)-發(fa)射(she)(she)極(ji)(ji)回(hui)(hui)(hui)路(lu)(lu)，稱(cheng)為(wei)輸出(chu)回(hui)(hui)(hui)路(lu)(lu)。深(shen)圳市凱軒(xuan)業(ye)科技致力于(yu)(yu)(yu)晶體(ti)管(guan)產品研發(fa)及方(fang)案設計，有(you)想(xiang)法可以來我司(si)咨(zi)詢！深(shen)圳晶體(ti)管(guan)直銷

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晶體(ti)管(guan)(guan)的(de)(de)(de)(de)結構及類型(xing)用不同(tong)的(de)(de)(de)(de)摻(chan)雜(za)方式在(zai)同(tong)一(yi)個(ge)(ge)硅片上制造出(chu)三個(ge)(ge)摻(chan)雜(za)區(qu)(qu)(qu)域，并形(xing)成(cheng)兩個(ge)(ge)PN結，就構成(cheng)了晶體(ti)管(guan)(guan).結構如圖(a)所示(shi)，位于(yu)中間(jian)的(de)(de)(de)(de)P區(qu)(qu)(qu)稱為基(ji)區(qu)(qu)(qu)，它(ta)很薄(bo)且雜(za)質(zhi)濃(nong)度很低；位于(yu)上層的(de)(de)(de)(de)N區(qu)(qu)(qu)是發射(she)區(qu)(qu)(qu)，摻(chan)雜(za)濃(nong)度很高；位于(yu)下(xia)層的(de)(de)(de)(de)N區(qu)(qu)(qu)是集(ji)電(dian)區(qu)(qu)(qu)，面積很大(da)(da)；它(ta)們分別引出(chu)電(dian)極(ji)為基(ji)極(ji)b,發射(she)極(ji)e和(he)集(ji)電(dian)極(ji)c.晶體(ti)管(guan)(guan)的(de)(de)(de)(de)電(dian)流放(fang)大(da)(da)作用如下(xia)圖所示(shi)為基(ji)本放(fang)大(da)(da)電(dian)路(lu)(lu)，為輸(shu)(shu)入電(dian)壓信(xin)(xin)號(hao)，它(ta)接入基(ji)極(ji)-發射(she)極(ji)回(hui)(hui)路(lu)(lu)，稱為輸(shu)(shu)入回(hui)(hui)路(lu)(lu)；放(fang)大(da)(da)后的(de)(de)(de)(de)信(xin)(xin)號(hao)在(zai)集(ji)電(dian)極(ji)-發射(she)極(ji)回(hui)(hui)路(lu)(lu)，稱為輸(shu)(shu)出(chu)回(hui)(hui)路(lu)(lu).由于(yu)發射(she)極(ji)是兩個(ge)(ge)回(hui)(hui)路(lu)(lu)的(de)(de)(de)(de)公共(gong)端(duan)，故稱該電(dian)路(lu)(lu)為共(gong)射(she)放(fang)大(da)(da)電(dian)路(lu)(lu).晶體(ti)管(guan)(guan)工作在(zai)放(fang)大(da)(da)狀態的(de)(de)(de)(de)外部條件是發射(she)結正(zheng)偏(pian)且集(ji)電(dian)結反(fan)向偏(pian)置，所以輸(shu)(shu)入回(hui)(hui)路(lu)(lu)加的(de)(de)(de)(de)基(ji)極(ji)電(dian)源(yuan)和(he)輸(shu)(shu)出(chu)回(hui)(hui)路(lu)(lu)加的(de)(de)(de)(de)集(ji)電(dian)極(ji)電(dian)源(yuan)深圳半導體(ti)晶體(ti)管(guan)(guan)